丝印：FDS6912A；Package：SO-8；Dual N-Channel Logic Level PowerTrenchÒ MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：224.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS6912A；Package：SOP-8；30V Dual N-Channel MOSFET

Features • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 6A RDS(ON)

文件：387.35 Kbytes 页数：6 Pages

UMW

友台半导体

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：222.94 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Dual N-Channel Logic Level PowerTrench MOSFET

文件：121.37 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Dual N-Channel Logic Level PowerTrench MOSFET

文件：121.37 Kbytes 页数：5 Pages

Fairchild

仙童半导体

双 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，6A，28mΩ

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •6 A，30 V\n•RDS(ON) = 28 mΩ @ VGS = 10 V\n•RDS(ON) = 35 mΩ @ VGS = 4.5 V\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体